ionization rate

英 [ˌaɪənaɪˈzeɪʃn reɪt] 美 [ˌaɪənəˈzeɪʃn reɪt]

电离率;电离速度

电力



双语例句

  1. High ionization rate, full reaction, pure film color, fast deposition.
    离化率高,膜层反应充分,使膜层颜色纯正,沉积速度快。
  2. Multi-photon ionization rate of hydrogen in the laser fields
    激光场中H原子的多光子电离速率
  3. Computation of Ionization Rate of Impurities at Low Temperature
    低温区杂质电离率的计算
  4. The absorption cross sections of ground and excited electronic state were calculated. The dependence of the ionization efficiency on the rate of excitation and ionization and the interaction time, and the conditions on the photon flux and fluence for saturated excitation and ionization were obtained.
    在一些典型实验条件下,计算出基态和激发态的吸收截面,给出电离效率分别与激发电离速率以及作用时间的变化关系,得到饱和激发电离的流量条件和通量条件等。
  5. Solution of ionization rate equation of light impurities in tokamaks
    托卡马克中轻杂质速率方程的求解
  6. Collisional ionization rate coefficients of electron impact ionization in a highly ionized Au plasma
    激光金等离子体的电子离子碰撞电离速率系数
  7. The results show that the order of the amplitudes of seasonal functions of the atmospheric ionization rate at altitudes below 70 km are several tens percent.
    计算结果表明,在70km以下的大气电离率的季变化幅度为百分之几十。
  8. The resonance ionization cross sections and rate coefficients for electron impact on Li-like Ca have been obtained by using Coulomb-Born exchange approximation and Z-scaled hydrogenic model in which the definition and evaluation of the screening constant were improved.
    在库仑坡恩交换近似及被我们改进了屏蔽常数定义和算法的Z标度类氢模型下,计算了类锂钙离子被电子碰撞的共振电离截面和速率系数。
  9. Computation of Ionization Rate of Impurities at Low Temperature in Si
    77K下硅中杂质电离率的计算
  10. In this article, statistical summation method is used to obtain system free energy expression. And the equation to calculate ionization rate is obtained at the base of the principle that the system free energy is the least versus the particle number.
    论文采用统计求和法推导出系统自由能的表达式,利用系统自由能对粒子数取最小值的原理得到计算电离度的沙赫方程。
  11. Measurement of X-ray ionization dose rate
    X射线的电离剂量率测量实验
  12. Monte Carlo Simulation of Ionization Rate of Hydrogen in the Laser-field
    在激光场中氢原子电离率的MonteCarlo经典模拟
  13. Ionization Radiation Character of CMOS Devices Under Differential Dose Rate
    不同辐射剂量率下CMOS器件的电离辐射性能
  14. Resonance ionization cross sections and rate coefficients of Al Xi
    A1Ⅺ共振电离截面和速率系数
  15. Ionization Rate and Absolute Intensity of Peptides Enhanced with Matrix-assisted Laser Desorption/ Ionization in the Presence of Proteins
    蛋白质辅助基质提高激光解吸/电离多肽离子化率和绝对强度的研究
  16. Experiment results show that ionization electric field intensity, power density and ionization energy density have limited influence upon plasma transport rate in a order of magnitude in the stream or glow discharge area of corona discharge.
    实验结果表明:在电晕放电的流光或辉光放电区域,电离电场强度、注入功率密度、电离能密度等参量对等离子体输运项的影响程度仅在1个数量级内;在电离能密度达到0.4mJ。
  17. When ionic strength of the cation is increased, the double ionization layer becomes thinner and extraction rate decreases for electrostatic force weakened.
    增大相同离子的离子强度,反胶束内表面的双电层变薄,减弱了蛋白质与反胶束内表面之间的静电吸引,萃取率减小。
  18. Using model of coronal and non-coronal radiation, ionization rate equation has been solved respectively.
    在日冕和非日冕两种模型下,分别求解了电离速率方程。
  19. The influ-'ences of inner-shell electron ionization on cross sections and rate coefficients have been researched.
    研究了内壳层电子电离对截面和速率系数的影响。
  20. Next studies in the multi-photons ionization process, how does the laser-plasma interaction affect the multi-photons ionization rate;
    其次研究多光子电离过程中,激光&等离子体相互作用如何影响多光子电离率;
  21. With increasing of ionization rate, the time needed for void formation is reduced and the void size increases first and then decreases.
    随着电离率的增大,空洞形成所需要的时间减少,空洞的尺寸先增大然后减小。
  22. The advantages of the magnetron sputtering are its stable process, uniform film structure and high quality of surface, but its shortcoming is low adhesion strength owing to its low ionization rate and low energy.
    而磁控溅射的特点是工艺稳定、膜层结构较均匀、表面质量高,但其缺点是离化率低、粒子能量小,从而影响膜与基底的结合力。
  23. The relation between the population distribution of the atomic Na excited by light field and ionization rate is described by the density matrix equation.
    运用密度矩阵方程描述了Na原子系统在激发光场作用下的粒子布居分布情况和电离速率间的关系。
  24. Plasma Enhanced Atomic Layer Deposition ( PEALD) is based on traditional ALD equipment and increase a RF function, it can make the less active precursor sources of ionization ion. It can get a faster growth rate and improve deposition efficiency.
    等离子体增强原子层沉积技术(PEALD)是在传统的ALD设备基础上增加了射频产生等离子体的功能,可以使活性较低的前驱体源电离成离子,增快生长速度,提高沉积效率。
  25. The impact ionization rate was theoretically derived for quantum well structure at high bias.
    之后针对量子阱结构在高偏压下,可能产生的碰撞离化现象,从理论上推导了其碰撞离化率。
  26. Numerical results show the influence of ionization rate and negative ions content on the stable void.
    数值研究了电离率和负离子含量对稳态空洞的影响。
  27. The changes of avalanche ionization rate and multi-photon ionization rate with the changes of laser intensity are investigated by taking the silica glass as an example.
    并且以熔融石英玻璃为例分析了碰撞电离系数和多光子电离系数与激光入射强度之间的关系。
  28. It is shown that dust voids can form only when the ionization rate is larger than the threshold value.
    结果发现,尘埃空洞在电离率超过某个阈值才能形成。
  29. Using the practical parameters of our femtosecond laser system, the ionization rate, threshold intensity, residual energy and electron energy distribution of Pd-like Xe system based on optical-field-induced ionization are calculated.
    并结合实验室飞秒激光系统的实际参数,计算了基于光场感应电离类钯氙系统的电离速率、阈值光强、电子剩余能以及电子能量分布等电离参数。
  30. The void boundary will decrease, the electric field intensity will increase and Mach number will decrease when raise the ionization rate or the negative ions content.
    研究结果表明电离率的增加和负离子含量的增加均能使空洞边界减小,空洞内部的电场强度增加,马赫数增加。